0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD602 features low collector to emitter saturation voltage v ce(sat) . mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current i c 500 ma peak collector current i cp 1a collector power dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base voltage v cbo i c =10a,i e =0 30 v collector-emitter voltage v ceo i c =10ma,i b =0 25 v emitter-base voltage v ebo i e =10a,i c =0 5 v collector-base cutoff current i cbo v cb =20v,i e =0 0.1 a forward current transfer ratio h fe v ce =10v,i c = 150 ma 85 160 340 collector-emitter saturation voltage v ce(sat) i c = 300 ma, i b = 30 ma 0.35 0.6 v transition frequency f t v cb =10v,i e = -50 ma , f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10v , i e = 0 , f = 1.0mhz 6 15 pf h fe classification marking wq wr ws h fe 85 170 120 240 170 340 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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